RJH6086BDPK PDF and Equivalents Search

 

RJH6086BDPK Specs and Replacement

Type Designator: RJH6086BDPK

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 198.4 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.65 V @25℃

tr ⓘ - Rise Time, typ: 71 nS

Coesⓘ - Output Capacitance, typ: 165 pF

Package: TO3P

 RJH6086BDPK Substitution

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RJH6086BDPK datasheet

 ..1. Size:91K  renesas
 rjh6086bdpk.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. G... See More ⇒

 6.1. Size:94K  renesas
 r07ds0470ej rjh6086bpk.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. G... See More ⇒

 8.1. Size:104K  renesas
 rjh6087bdpk.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gat... See More ⇒

 8.2. Size:107K  renesas
 r07ds0390ej rjh6088bdp.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gat... See More ⇒

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Specs: RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , IRG7R313U , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - RJH6086BDPK transistor spec

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