Справочник IGBT. RJH6086BDPK

 

RJH6086BDPK - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH6086BDPK
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 198.4 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 45 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.65 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 71 nS
   Coesⓘ - Выходная емкость, типовая: 165 pF
   Тип корпуса: TO3P

 Аналог (замена) для RJH6086BDPK

 

 

RJH6086BDPK Datasheet (PDF)

 ..1. Size:91K  renesas
 rjh6086bdpk.pdf

RJH6086BDPK RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G

 6.1. Size:94K  renesas
 r07ds0470ej rjh6086bpk.pdf

RJH6086BDPK RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G

 8.1. Size:104K  renesas
 rjh6087bdpk.pdf

RJH6086BDPK RJH6086BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 8.2. Size:107K  renesas
 r07ds0390ej rjh6088bdp.pdf

RJH6086BDPK RJH6086BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 8.3. Size:106K  renesas
 r07ds0389ej rjh6087bdp.pdf

RJH6086BDPK RJH6086BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 8.4. Size:105K  renesas
 rjh6088bdpk.pdf

RJH6086BDPK RJH6086BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

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