RJH60D0DPQ-A0 Todos los transistores

 

RJH60D0DPQ-A0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJH60D0DPQ-A0
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 140 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Paquete / Cubierta: TO247A
 

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RJH60D0DPQ-A0 datasheet

 ..1. Size:82K  renesas
 rjh60d0dpq-a0.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 4.1. Size:85K  renesas
 r07ds0526ej rjh60d0dpq.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:97K  renesas
 rjh60d0dpk.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:97K  renesas
 rjh60d0dpm.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300 600V - 22A - IGBT Rev.3.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

MOSTRAR MÁS

Otros transistores... RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , IHW20N135R5 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 .

 

 

 


 
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