RJH60D0DPQ-A0 PDF and Equivalents Search

 

RJH60D0DPQ-A0 Specs and Replacement

Type Designator: RJH60D0DPQ-A0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 140 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247A

 RJH60D0DPQ-A0 Substitution

- IGBT ⓘ Cross-Reference Search

 

RJH60D0DPQ-A0 datasheet

 ..1. Size:82K  renesas
 rjh60d0dpq-a0.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 4.1. Size:85K  renesas
 r07ds0526ej rjh60d0dpq.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application Inverter Aug 26, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 5.1. Size:97K  renesas
 rjh60d0dpk.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

 5.2. Size:97K  renesas
 rjh60d0dpm.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300 600V - 22A - IGBT Rev.3.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

SHOW MORE

Specs: RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , IHW20N135R5 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 .

History: SKM145GB063DN

Keywords - RJH60D0DPQ-A0 transistor spec

 RJH60D0DPQ-A0 cross reference
 RJH60D0DPQ-A0 equivalent finder
 RJH60D0DPQ-A0 lookup
 RJH60D0DPQ-A0 substitution
 RJH60D0DPQ-A0 replacement

 

 

 

 

↑ Back to Top
.