All IGBT. RJH60D0DPQ-A0 Datasheet

 

RJH60D0DPQ-A0 Datasheet and Replacement


   Type Designator: RJH60D0DPQ-A0
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 140 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO247A
      - IGBT Cross-Reference

 

RJH60D0DPQ-A0 Datasheet (PDF)

 ..1. Size:82K  renesas
 rjh60d0dpq-a0.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 4.1. Size:85K  renesas
 r07ds0526ej rjh60d0dpq.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100600 V - 22 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.1. Size:97K  renesas
 rjh60d0dpk.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400600V - 22A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

 5.2. Size:97K  renesas
 rjh60d0dpm.pdf pdf_icon

RJH60D0DPQ-A0

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300600V - 22A - IGBT Rev.3.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

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Datasheet: RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , IHW20N135R5 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 .

History: IRG4PH50S-E | 1MBI1500UE-330-02

Keywords - RJH60D0DPQ-A0 transistor datasheet

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