RJH60D5DPQ-A0
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60D5DPQ-A0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.6
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 35
nS
Coesⓘ - Capacitancia de salida, typ: 120
pF
Qgⓘ - Carga total de la puerta, typ: 78
nC
Paquete / Cubierta: TO247A
Búsqueda de reemplazo de RJH60D5DPQ-A0
- IGBT
RJH60D5DPQ-A0
Datasheet (PDF)
..1. Size:82K renesas
rjh60d5dpq-a0.pdf 
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
4.1. Size:85K renesas
r07ds0527ej rjh60d5dpq.pdf
Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100600 V - 37 A - IGBT Rev.1.00Application: Inverter Aug 26, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
5.1. Size:98K renesas
rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200600V - 37A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
5.2. Size:82K renesas
r07ds0174ej rjh60d5dpm.pdf
Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100Silicon N Channel IGBT Rev.1.00Application: Inverter Nov 15, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
5.3. Size:98K renesas
rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400600V - 37A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
5.4. Size:82K renesas
r07ds0163ej rjh60d5dpk.pdf
Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
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