All IGBT. RJH60D5DPQ-A0 Datasheet

 

RJH60D5DPQ-A0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJH60D5DPQ-A0

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6V

Maximum Collector Current |Ic|, A: 75A

Rise Time, nS: 50

Package: TO247A

RJH60D5DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D5DPQ-A0 Datasheet (PDF)

1.1. r07ds0527ej rjh60d5dpq.pdf Size:85K _renesas

RJH60D5DPQ-A0
RJH60D5DPQ-A0

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.2. r07ds0163ej rjh60d5dpk.pdf Size:82K _renesas

RJH60D5DPQ-A0
RJH60D5DPQ-A0

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.3. r07ds0174ej rjh60d5dpm.pdf Size:82K _renesas

RJH60D5DPQ-A0
RJH60D5DPQ-A0

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100 Silicon N Channel IGBT Rev.1.00 Application: Inverter Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

1.4. rjh60d5dpm.pdf Size:98K _igbt

RJH60D5DPQ-A0
RJH60D5DPQ-A0

 Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200 600V - 37A - IGBT Rev.2.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

1.5. rjh60d5dpk.pdf Size:98K _igbt

RJH60D5DPQ-A0
RJH60D5DPQ-A0

 Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400 600V - 37A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

1.6. rjh60d5dpq-a0.pdf Size:82K _igbt

RJH60D5DPQ-A0
RJH60D5DPQ-A0

 Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer t

Datasheet: RJH30H1DPP-M0 , RJH30H2DPK-M0 , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , HGTG30N60A4D , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |