RJH60F0DPQ-A0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60F0DPQ-A0  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 201.6 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 92 nS

Coesⓘ - Capacitancia de salida, typ: 82 pF

Encapsulados: TO247A

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RJH60F0DPQ-A0 datasheet

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 rjh60f0dpq-a0.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 4.1. Size:89K  renesas
 r07ds0324ej rjh60f0dpq.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 5.1. Size:89K  renesas
 r07ds0234ej rjh60f0dpk.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 5.2. Size:86K  renesas
 rjh60f0dpk.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

MOSTRAR MÁS

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