RJH60F0DPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60F0DPQ-A0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 201.6 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 92 nS
Coesⓘ - Capacitancia de salida, typ: 82 pF
Paquete / Cubierta: TO247A
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RJH60F0DPQ-A0 Datasheet (PDF)
rjh60f0dpq-a0.pdf
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
r07ds0324ej rjh60f0dpq.pdf
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
r07ds0234ej rjh60f0dpk.pdf
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
rjh60f0dpk.pdf
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
Otros transistores... RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , YGW40N65F1 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE .
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