Справочник IGBT. RJH60F0DPQ-A0

 

RJH60F0DPQ-A0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH60F0DPQ-A0
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 201.6 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 92 nS
   Coesⓘ - Выходная емкость, типовая: 82 pF
   Тип корпуса: TO247A

 Аналог (замена) для RJH60F0DPQ-A0

 

 

RJH60F0DPQ-A0 Datasheet (PDF)

 ..1. Size:86K  renesas
 rjh60f0dpq-a0.pdf

RJH60F0DPQ-A0 RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 4.1. Size:89K  renesas
 r07ds0324ej rjh60f0dpq.pdf

RJH60F0DPQ-A0 RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 5.1. Size:89K  renesas
 r07ds0234ej rjh60f0dpk.pdf

RJH60F0DPQ-A0 RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 5.2. Size:86K  renesas
 rjh60f0dpk.pdf

RJH60F0DPQ-A0 RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

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