All IGBT. RJH60F0DPQ-A0 Datasheet

 

RJH60F0DPQ-A0 Datasheet and Replacement


   Type Designator: RJH60F0DPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 201.6 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 92 nS
   Coesⓘ - Output Capacitance, typ: 82 pF
   Package: TO247A
      - IGBT Cross-Reference

 

RJH60F0DPQ-A0 Datasheet (PDF)

 ..1. Size:86K  renesas
 rjh60f0dpq-a0.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 4.1. Size:89K  renesas
 r07ds0324ej rjh60f0dpq.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 5.1. Size:89K  renesas
 r07ds0234ej rjh60f0dpk.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

 5.2. Size:86K  renesas
 rjh60f0dpk.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at

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Datasheet: RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , YGW40N65F1 , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE .

History: IRG4PC50S | STGB30NB60H | SNG401225 | KGT25N120NDH | IRG4PC40F | BT30N60ANF | IRGP50B60PD

Keywords - RJH60F0DPQ-A0 transistor datasheet

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