RJH60F0DPQ-A0 PDF and Equivalents Search

 

RJH60F0DPQ-A0 Specs and Replacement

Type Designator: RJH60F0DPQ-A0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 201.6 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 92 nS

Coesⓘ - Output Capacitance, typ: 82 pF

Package: TO247A

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RJH60F0DPQ-A0 datasheet

 ..1. Size:86K  renesas
 rjh60f0dpq-a0.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

 4.1. Size:89K  renesas
 r07ds0324ej rjh60f0dpq.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

 5.1. Size:89K  renesas
 r07ds0234ej rjh60f0dpk.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

 5.2. Size:86K  renesas
 rjh60f0dpk.pdf pdf_icon

RJH60F0DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

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Specs: RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , NGD8201N , RJH60F3DPK , RJH60F3DPQ-A0 , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE .

History: NGTB40N60FLWG

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