RJH60F3DPQ-A0
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60F3DPQ-A0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 178.5
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.4
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 96
nS
Coesⓘ - Capacitancia de salida, typ: 73
pF
Paquete / Cubierta: TO247A
Búsqueda de reemplazo de RJH60F3DPQ-A0
- IGBT
RJH60F3DPQ-A0
Datasheet (PDF)
..1. Size:86K renesas
rjh60f3dpq-a0.pdf 
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
4.1. Size:89K renesas
r07ds0391ej rjh60f3dpq.pdf
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
5.1. Size:88K renesas
r07ds0199ej rjh60f3dpk.pdf
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
5.2. Size:85K renesas
rjh60f3dpk.pdf
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
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