RJH60F3DPQ-A0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60F3DPQ-A0  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 178.5 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 96 nS

Coesⓘ - Capacitancia de salida, typ: 73 pF

Encapsulados: TO247A

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RJH60F3DPQ-A0 datasheet

 ..1. Size:86K  renesas
 rjh60f3dpq-a0.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 4.1. Size:89K  renesas
 r07ds0391ej rjh60f3dpq.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 5.1. Size:88K  renesas
 r07ds0199ej rjh60f3dpk.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 5.2. Size:85K  renesas
 rjh60f3dpk.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

MOSTRAR MÁS

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