Справочник IGBT. RJH60F3DPQ-A0

 

RJH60F3DPQ-A0 Даташит. Аналоги. Параметры и характеристики.


   Наименование: RJH60F3DPQ-A0
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 178.5 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 96 nS
   Coesⓘ - Выходная емкость, типовая: 73 pF
   Тип корпуса: TO247A
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RJH60F3DPQ-A0 Datasheet (PDF)

 ..1. Size:86K  renesas
 rjh60f3dpq-a0.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 4.1. Size:89K  renesas
 r07ds0391ej rjh60f3dpq.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 5.1. Size:88K  renesas
 r07ds0199ej rjh60f3dpk.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 5.2. Size:85K  renesas
 rjh60f3dpk.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

ПОКАЗАТЬ ЕЩЁ

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History: TA49119 | SRE60N065FSU2S8 | OST20N135HRF | IRGS4056D | OST30N65HMF | IRGP4069 | IXGH32N60BU1

 

 
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