All IGBT. RJH60F3DPQ-A0 Datasheet

 

RJH60F3DPQ-A0 Datasheet and Replacement


   Type Designator: RJH60F3DPQ-A0
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 178.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 96 nS
   Coesⓘ - Output Capacitance, typ: 73 pF
   Package: TO247A
 

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RJH60F3DPQ-A0 Datasheet (PDF)

 ..1. Size:86K  renesas
 rjh60f3dpq-a0.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 4.1. Size:89K  renesas
 r07ds0391ej rjh60f3dpq.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 5.1. Size:88K  renesas
 r07ds0199ej rjh60f3dpk.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

 5.2. Size:85K  renesas
 rjh60f3dpk.pdf pdf_icon

RJH60F3DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC

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Datasheet: RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , JT075N065WED , RJH60F4DPQ-A0 , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE .

History: SGT50T65FD1PN | MGD623N

Keywords - RJH60F3DPQ-A0 transistor datasheet

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