RJH60F4DPQ-A0
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60F4DPQ-A0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 235.8
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.4
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 150
nS
Coesⓘ - Capacitancia de salida, typ: 93
pF
Paquete / Cubierta: TO247A
Búsqueda de reemplazo de RJH60F4DPQ-A0
- IGBT
RJH60F4DPQ-A0
Datasheet (PDF)
..1. Size:87K renesas
rjh60f4dpq-a0.pdf 
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
4.1. Size:82K renesas
r07ds0325ej rjh60f4dpq.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
5.1. Size:87K renesas
r07ds0235ej rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
5.2. Size:84K renesas
rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
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