RJH60F4DPQ-A0 PDF Specs and Replacement
Type Designator: RJH60F4DPQ-A0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 235.8 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 93 pF
Package: TO247A
RJH60F4DPQ-A0 Substitution
RJH60F4DPQ-A0 PDF specs
rjh60f4dpq-a0.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at ... See More ⇒
r07ds0325ej rjh60f4dpq.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at ... See More ⇒
r07ds0235ej rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw... See More ⇒
rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw... See More ⇒
Specs: RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK , RJH60D7DPM , RJH60F0DPQ-A0 , RJH60F3DPK , RJH60F3DPQ-A0 , SGH80N60UFD , RJH60F5DPQ-A0 , RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 .
Keywords - RJH60F4DPQ-A0 transistor spec
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