RJP30E2DPP-M0 Todos los transistores

 

RJP30E2DPP-M0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJP30E2DPP-M0

Polaridad de transistor: N-Channel

Tensión colector-emisor (Vce): 360

Voltaje de saturación colector-emisor (Vce sat): 1.7

Corriente del colector DC máxima (Ic): 35

Tiempo de elevación: 150

Empaquetado / Estuche: TO220FL

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RJP30E2DPP-M0 Datasheet (PDF)

..1. rjp30e2dpp-m0.pdf Size:149K _renesas

RJP30E2DPP-M0 RJP30E2DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

3.1. rjp30e2dpp-equivalent for rjh30e2 without diode.pdf Size:152K _renesas

RJP30E2DPP-M0 RJP30E2DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

4.1. r07ds0347ej rjp30e2dpp.pdf Size:152K _renesas

RJP30E2DPP-M0 RJP30E2DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 8.1. rjp30e3dpp-m0.pdf Size:160K _renesas

RJP30E2DPP-M0 RJP30E2DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

8.2. r07ds0353ej rjp30e3dpp.pdf Size:190K _renesas

RJP30E2DPP-M0 RJP30E2DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

Otros transistores... RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , GT60N321 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 .

 

 
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