RJP30E2DPP-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: RJP30E2DPP-M0
Тип управляющего канала: N-Channel
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 360
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.7
Максимальный постоянный ток коллектора (Ic): 35
Тип корпуса: TO220FL
Аналог (замена) для RJP30E2DPP-M0
RJP30E2DPP-M0 Datasheet (PDF)
..1. rjp30e2dpp-m0.pdf Size:149K _renesas
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
3.1. rjp30e2dpp-equivalent for rjh30e2 without diode.pdf Size:152K _renesas
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
4.1. r07ds0347ej rjp30e2dpp.pdf Size:152K _renesas
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
8.1. rjp30e3dpp-m0.pdf Size:160K _renesas
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
8.2. r07ds0353ej rjp30e3dpp.pdf Size:190K _renesas
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 15, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack
Другие IGBT... RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , SGW30N60 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 .



Список транзисторов
Обновления
IGBT: NGTG15N60S1EG | NGTB40N65FL2WG | NGTB40N120L3WG | NGTB25N120FL3WG | NGTB15N60S1EG | NGTB15N135IHRWG | NGTB10N60R2DT4G | NGTB05N60R2DT4G | NGTB03N60R2DT4G | ISL9V5045S3ST-F085 | ISL9V5045S3