RJP30E2DPP-M0 PDF Specs and Replacement
The RJP30E2DPP-M0 is a high-voltage IGBT designed for efficient power switching in industrial and consumer applications. It combines the high input impedance of a MOSFET with the low conduction losses of a bipolar transistor. The device supports a collector-emitter voltage up to 360V and a continuous collector current of approximately 35A, making it suitable for inverters, SMPS, motor drives, induction heating systems. The integrated fast recovery diode improves reverse conduction performance and reduces switching losses. Optimized gate charge and low saturation voltage enable high efficiency and reliable operation at high switching frequencies.
Type Designator: RJP30E2DPP-M0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO220F
RJP30E2DPP-M0 Substitution
RJP30E2DPP-M0 PDF specs
rjp30e2dpp-m0.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
rjp30e2dpp rjh30e2 equivalent no diode.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
r07ds0347ej rjp30e2dpp.pdf
Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
r07ds0353ej rjp30e3dpp.pdf
Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒
Specs: RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , TGAN60N60F2DS , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 .
Keywords - RJP30E2DPP-M0 transistor spec
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