RJH60F4DPK - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60F4DPK
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 235.8 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 150 nS
Coesⓘ - Capacitancia de salida, typ: 93 pF
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de RJH60F4DPK - IGBT
RJH60F4DPK Datasheet (PDF)
r07ds0235ej rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
rjh60f4dpk.pdf
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300(Previous: REJ03G1835-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 17, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
rjh60f4dpq-a0.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
r07ds0325ej rjh60f4dpq.pdf
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200600 V - 30 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
rjh60f3dpq-a0.pdf
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
r07ds0234ej rjh60f0dpk.pdf
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
r07ds0324ej rjh60f0dpq.pdf
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
r07ds0328ej rjh60f7dpq.pdf
Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns
rjh60f0dpq-a0.pdf
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200600 V - 25 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
rjh60f6bdpq-a0.pdf
Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100600V - 45A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
rjh60f5bdpq-a0.pdf
Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC
rjh60f7adpk.pdf
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed
rjh60f6dpq-a0.pdf
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
r07ds0236ej rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
rjh60f0dpk.pdf
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Mar 30, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
r07ds0237ej rjh60f7adp.pdf
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed
r07ds0199ej rjh60f3dpk.pdf
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
rjh60f7dpq-a0.pdf
Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns
rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
r07ds0055ej rjh60f5dpk.pdf
Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300Silicon N Channel IGBT Rev.3.00High Speed Power Switching Nov 24, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
r07ds0391ej rjh60f3dpq.pdf
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200600 V - 20 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
rjh60f3dpk.pdf
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Dec 01, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
rjh60f7bdpq-a0.pdf
Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100600V - 50A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
rjh60f5dpk.pdf
Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Max
r07ds0327ej rjh60f6dpq.pdf
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
r07ds0326ej rjh60f5dpq.pdf
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
rjh60f5dpq-a0.pdf
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200600 V - 40 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
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