RJH60F4DPK - аналоги, основные параметры, даташиты
Наименование: RJH60F4DPK
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ -
Максимальная рассеиваемая мощность: 235.8 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
tr ⓘ - Время нарастания типовое: 150 nS
Coesⓘ - Выходная емкость,
типовая: 93 pF
Тип корпуса: TO3P
Аналог (замена) для RJH60F4DPK
- подбор ⓘ IGBT транзистора по параметрам
RJH60F4DPK даташит
..1. Size:87K renesas
r07ds0235ej rjh60f4dpk.pdf 
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
..2. Size:84K renesas
rjh60f4dpk.pdf 
Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw
5.1. Size:87K renesas
rjh60f4dpq-a0.pdf 
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
5.2. Size:82K renesas
r07ds0325ej rjh60f4dpq.pdf 
Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at
8.1. Size:86K renesas
rjh60f3dpq-a0.pdf 
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
8.2. Size:89K renesas
r07ds0234ej rjh60f0dpk.pdf 
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
8.3. Size:89K renesas
r07ds0324ej rjh60f0dpq.pdf 
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
8.4. Size:89K renesas
r07ds0328ej rjh60f7dpq.pdf 
Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns
8.5. Size:86K renesas
rjh60f0dpq-a0.pdf 
Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
8.6. Size:93K renesas
rjh60f6bdpq-a0.pdf 
Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100 600V - 45A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
8.7. Size:92K renesas
rjh60f5bdpq-a0.pdf 
Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC
8.8. Size:82K renesas
rjh60f7adpk.pdf 
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed
8.9. Size:87K renesas
rjh60f6dpq-a0.pdf 
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
8.10. Size:86K renesas
r07ds0236ej rjh60f6dpk.pdf 
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
8.11. Size:86K renesas
rjh60f0dpk.pdf 
Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at
8.12. Size:85K renesas
r07ds0237ej rjh60f7adp.pdf 
Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed
8.13. Size:88K renesas
r07ds0199ej rjh60f3dpk.pdf 
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
8.14. Size:86K renesas
rjh60f7dpq-a0.pdf 
Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns
8.15. Size:83K renesas
rjh60f6dpk.pdf 
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
8.16. Size:85K renesas
r07ds0055ej rjh60f5dpk.pdf 
Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
8.17. Size:89K renesas
r07ds0391ej rjh60f3dpq.pdf 
Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
8.18. Size:85K renesas
rjh60f3dpk.pdf 
Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC
8.19. Size:93K renesas
rjh60f7bdpq-a0.pdf 
Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100 600V - 50A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
8.20. Size:219K renesas
rjh60f5dpk.pdf 
Preliminary www.DataSheet4U.com RJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009 Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Max
8.21. Size:90K renesas
r07ds0327ej rjh60f6dpq.pdf 
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
8.22. Size:88K renesas
r07ds0326ej rjh60f5dpq.pdf 
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
8.23. Size:85K renesas
rjh60f5dpq-a0.pdf 
Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I
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