RJH60F4DPK PDF and Equivalents Search

Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw... See More ⇒

Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed sw... See More ⇒

Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at ... See More ⇒

Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at ... See More ⇒

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC... See More ⇒

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100 600V - 45A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at... See More ⇒

Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 68 ns typ. (at IC... See More ⇒

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a... See More ⇒

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s... See More ⇒

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at... See More ⇒

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC... See More ⇒

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s... See More ⇒

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC... See More ⇒

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 92 ns typ. (at IC... See More ⇒

Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100 600V - 50A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at... See More ⇒

Preliminary www.DataSheet4U.com RJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009 Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Max... See More ⇒

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a... See More ⇒

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (at I... See More ⇒