RJH60D3DPP-M0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60D3DPP-M0  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 40 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 60 pF

Encapsulados: TO220F

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RJH60D3DPP-M0 datasheet

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RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400 600V - 17A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

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 r07ds0162ej rjh60d3dpp.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Mar 09, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:82K  renesas
 r07ds0161ej rjh60d3dpe.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400 Silicon N Channel IGBT Rev.4.00 Application Inverter Mar 09, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:98K  renesas
 rjh60d3dpe.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500 600V - 17A - IGBT Rev.5.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

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