All IGBT. RJH60D3DPP-M0 Datasheet

 

RJH60D3DPP-M0 IGBT. Datasheet pdf. Equivalent


   Type Designator: RJH60D3DPP-M0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 40
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 35
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 16
   Collector Capacity (Cc), typ, pF: 60
   Total Gate Charge (Qg), typ, nC: 37
   Package: TO220F

 RJH60D3DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH60D3DPP-M0 Datasheet (PDF)

 ..1. Size:98K  renesas
 rjh60d3dpp-m0.pdf

RJH60D3DPP-M0 RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400600V - 17A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec

 4.1. Size:82K  renesas
 r07ds0162ej rjh60d3dpp.pdf

RJH60D3DPP-M0 RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Mar 09, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

 5.1. Size:82K  renesas
 r07ds0161ej rjh60d3dpe.pdf

RJH60D3DPP-M0 RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400Silicon N Channel IGBT Rev.4.00Application: Inverter Mar 09, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t

 5.2. Size:98K  renesas
 rjh60d3dpe.pdf

RJH60D3DPP-M0 RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500600V - 17A - IGBT Rev.5.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno

Datasheet: RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , IXRP15N120 , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF .

 

 
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