RJH60D3DPP-M0 PDF and Equivalents Search

 

RJH60D3DPP-M0 Specs and Replacement

Type Designator: RJH60D3DPP-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 40 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: TO220F

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RJH60D3DPP-M0 datasheet

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 rjh60d3dpp-m0.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400 600V - 17A - IGBT Rev.4.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec... See More ⇒

 4.1. Size:82K  renesas
 r07ds0162ej rjh60d3dpp.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300 Silicon N Channel IGBT Rev.3.00 Application Inverter Mar 09, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe... See More ⇒

 5.1. Size:82K  renesas
 r07ds0161ej rjh60d3dpe.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400 Silicon N Channel IGBT Rev.4.00 Application Inverter Mar 09, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t... See More ⇒

 5.2. Size:98K  renesas
 rjh60d3dpe.pdf pdf_icon

RJH60D3DPP-M0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500 600V - 17A - IGBT Rev.5.00 Application Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno... See More ⇒

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Specs: RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK , RJH60C9DPD , RJH60D1DPP-M0 , RJH60D1DPE , RJH60D2DPP-M0 , RJH60D2DPE , TGAN40N60FD , RJH60D3DPE , RJP60D0DPK , RJH60D5DPK , RJH60D6DPK , RJH60D7DPK , RJH60D0DPK , RJP60D0DPM , TIG110BF .

Keywords - RJH60D3DPP-M0 transistor spec

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