TIG058E8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIG058E8Ordering number : ENA1381SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG058E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.Specifications a

Ordering number : ENA1381ATIG058E8N-Channel IGBThttp://onsemi.com( );400V, 150A, VCE sat 4V, Single ECH8Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free complianceSpecificationsAbsolute Maximum Ratings

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

Ordering number : ENA1775BTIG056BFN-Channel IGBThttp://onsemi.com430V, 240A, VCE(sat); 3.6V TO-220F-3FSFeatures Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector to Emitter Voltage VCES 430 VGate to Emitter Voltage VGES