TIG058E8 Todos los transistores

 

TIG058E8 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIG058E8
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Código de marcado: ZB
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 0.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(pulse) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Coesⓘ - Capacitancia de salida, typ: 32 pF
   Paquete / Cubierta: ECH8
 

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TIG058E8 datasheet

 ..1. Size:343K  sanyo
 tig058e8.pdf pdf_icon

TIG058E8

TIG058E8 Ordering number ENA1381 SANYO Semiconductors DATA SHEET N-Channel IGBT TIG058E8 Light-Controlling Flash Applications Features Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications a

 ..2. Size:382K  onsemi
 tig058e8.pdf pdf_icon

TIG058E8

Ordering number ENA1381A TIG058E8 N-Channel IGBT http //onsemi.com ( ); 400V, 150A, VCE sat 4V, Single ECH8 Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free compliance Specifications Absolute Maximum Ratings

 9.1. Size:61K  1
 tig052ts.pdf pdf_icon

TIG058E8

Ordering number ENA1258 TIG052TS SANYO Semiconductors DATA SHEET N-Channel IGBT TIG052TS Light-Controlling Flash Applications Features Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=2

 9.2. Size:324K  sanyo
 tig056bf.pdf pdf_icon

TIG058E8

TIG056BF Ordering number ENA1775A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG056BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Volta

MOSTRAR MÁS

Otros transistores... RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , FGH40N60SFD , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N .

 

 

 


 
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