All IGBT. TIG058E8 Datasheet

 

TIG058E8 IGBT. Datasheet pdf. Equivalent


   Type Designator: TIG058E8
   Type: IGBT + Built-in Zener Diodes
   Marking Code: ZB
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 0.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 32 pF
   Package: ECH8

 TIG058E8 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TIG058E8 Datasheet (PDF)

 ..1. Size:343K  sanyo
 tig058e8.pdf

TIG058E8 TIG058E8

TIG058E8Ordering number : ENA1381SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG058E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.Specifications a

 ..2. Size:382K  onsemi
 tig058e8.pdf

TIG058E8 TIG058E8

Ordering number : ENA1381ATIG058E8N-Channel IGBThttp://onsemi.com( );400V, 150A, VCE sat 4V, Single ECH8Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free complianceSpecificationsAbsolute Maximum Ratings

 9.1. Size:61K  1
 tig052ts.pdf

TIG058E8 TIG058E8

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

 9.2. Size:324K  sanyo
 tig056bf.pdf

TIG058E8 TIG058E8

TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta

 9.3. Size:61K  sanyo
 tig052gs.pdf

TIG058E8 TIG058E8

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

 9.4. Size:151K  onsemi
 tig056bf-1e tig056bf.pdf

TIG058E8 TIG058E8

Ordering number : ENA1775BTIG056BFN-Channel IGBThttp://onsemi.com430V, 240A, VCE(sat); 3.6V TO-220F-3FSFeatures Low-saturation voltage Protection diode in Ultrahigh speed switching Enhansment typeSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector to Emitter Voltage VCES 430 VGate to Emitter Voltage VGES

Datasheet: RJH60D0DPK , RJP60D0DPM , TIG110BF , TIG110GMH , TIG111BF , TIG111GMH , TIG052TS , TIG056BF , FGH40N60SFD , TIG062E8 , TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N .

 

 
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