TIG058E8 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

TIG058E8 Specs and Replacement

Type Designator: TIG058E8

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 0.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃

Coesⓘ - Output Capacitance, typ: 32 pF

Package: ECH8

TIG058E8 Substitution

- IGBT ⓘ Cross-Reference Search

TIG058E8 datasheet

..1. Size:343K sanyo
tig058e8.pdf pdf_icon

TIG058E8 Ordering number ENA1381 SANYO Semiconductors DATA SHEET N-Channel IGBT TIG058E8 Light-Controlling Flash Applications Features Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications a... See More ⇒

..2. Size:382K onsemi
tig058e8.pdf pdf_icon

Ordering number ENA1381A TIG058E8 N-Channel IGBT http //onsemi.com ( ); 400V, 150A, VCE sat 4V, Single ECH8 Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free compliance Specifications Absolute Maximum Ratings ... See More ⇒

9.1. Size:61K 1
tig052ts.pdf pdf_icon

Ordering number ENA1258 TIG052TS SANYO Semiconductors DATA SHEET N-Channel IGBT TIG052TS Light-Controlling Flash Applications Features Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=2... See More ⇒

9.2. Size:324K sanyo
tig056bf.pdf pdf_icon

TIG056BF Ordering number ENA1775A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG056BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Volta... See More ⇒