TIG058E8 - параметры транзистора, его аналоги, Даташиты

TIG058E8 Datasheet (PDF)

..1. Size:343K sanyo
tig058e8.pdf pdf_icon

TIG058E8Ordering number : ENA1381SANYO SemiconductorsDATA SHEETN-Channel IGBTTIG058E8Light-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltage drive (4V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance.Specifications a

..2. Size:382K onsemi
tig058e8.pdf pdf_icon

Ordering number : ENA1381ATIG058E8N-Channel IGBThttp://onsemi.com( );400V, 150A, VCE sat 4V, Single ECH8Features Low-saturation voltage Low voltage drive (4V) Enhansment type Built-in Gate-to-Emitter protection diode Mounting Height 0.9mm, Mounting Area 8.12mm2 dv / dt guarantee* Halogen free complianceSpecificationsAbsolute Maximum Ratings

9.1. Size:61K 1
tig052ts.pdf pdf_icon

Ordering number : ENA1258 TIG052TSSANYO SemiconductorsDATA SHEETN-Channel IGBTTIG052TSLight-Controlling Flash ApplicationsFeatures Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*SpecificationsAbsolute Maximum Ratings at Ta=2

9.2. Size:324K sanyo
tig056bf.pdf pdf_icon

TIG056BF Ordering number : ENA1775ASANYO SemiconductorsDATA SHEETN-Channel IGBTTIG056BFHigh Power High Speed Switching ApplicationsFeatures Low-saturation voltage Ultrahigh speed switching Enhansment typeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Emitter Voltage VCES 400 VGate-to-Emitter Volta