FGW50N65WE Todos los transistores

 

FGW50N65WE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW50N65WE
   Tipo de transistor: IGBT + Diode
   Código de marcado: 50G65WE
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 330 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Qgⓘ - Carga total de la puerta, typ: 215 nC
   Paquete / Cubierta: TO247
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FGW50N65WE Datasheet (PDF)

 7.1. Size:565K  fuji
 fgw50n60h.pdf pdf_icon

FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 7.2. Size:625K  fuji
 fgw50n60vda.pdf pdf_icon

FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

 7.3. Size:560K  fuji
 fgw50n60hd.pdf pdf_icon

FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 7.4. Size:569K  fuji
 fgw50n60hc.pdf pdf_icon

FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

MOSTRAR MÁS

Otros transistores... TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , IXGH60N60 , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA .

 

 
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FGW50N65WE   FGW50N65WE   FGW50N65WE  

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