FGW50N65WE Todos los transistores

 

FGW50N65WE - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW50N65WE
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 330 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Paquete / Cubierta: TO247

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FGW50N65WE Datasheet (PDF)

 7.1. Size:565K  fuji
 fgw50n60h.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

 7.2. Size:625K  fuji
 fgw50n60vda.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circuit

 7.3. Size:560K  fuji
 fgw50n60hd.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

 7.4. Size:569K  fuji
 fgw50n60hc.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

MOSTRAR MÁS

Otros transistores... TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGA25N120ANTD , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA .

History: KGT30N120NDA

 

 
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