FGW50N65WE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGW50N65WE  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 330 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 36 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de FGW50N65WE IGBT

- Selecciónⓘ de transistores por parámetros

 

FGW50N65WE datasheet

 7.1. Size:565K  fuji
 fgw50n60h.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

 7.2. Size:625K  fuji
 fgw50n60vda.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circuit

 7.3. Size:560K  fuji
 fgw50n60hd.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

 7.4. Size:569K  fuji
 fgw50n60hc.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

MOSTRAR MÁS

Otros transistores... TIG064E8, TIG065E8, TIG066SS, DGG4015, FGM622S, FGM623S, MGD623N, MGD623S, FGPF4536, SKW030N065, GM200HB12CT, GM400HB06CT, KGH15N120NDA, KGH25N120NDA, KGT12N120NDH, KGT15N120KDA, KGT15N120NDA