FGW50N65WE PDF and Equivalents Search

 

FGW50N65WE Specs and Replacement

Type Designator: FGW50N65WE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 330 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO247

 FGW50N65WE Substitution

- IGBT ⓘ Cross-Reference Search

 

FGW50N65WE datasheet

 7.1. Size:565K  fuji
fgw50n60h.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol... See More ⇒

 7.2. Size:625K  fuji
fgw50n60vda.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circuit... See More ⇒

 7.3. Size:560K  fuji
fgw50n60hd.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso... See More ⇒

 7.4. Size:569K  fuji
fgw50n60hc.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso... See More ⇒

Specs: TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGA25N120ANTD , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA .

History: SGL30N60RUFD

Keywords - FGW50N65WE transistor spec

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