All IGBT. FGW50N65WE Datasheet

 

FGW50N65WE IGBT. Datasheet pdf. Equivalent


   Type Designator: FGW50N65WE
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 50G65WE
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qgⓘ - Total Gate Charge, typ: 215 nC
   Package: TO247

 FGW50N65WE Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGW50N65WE Datasheet (PDF)

 7.1. Size:565K  fuji
 fgw50n60h.pdf

FGW50N65WE FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 7.2. Size:625K  fuji
 fgw50n60vda.pdf

FGW50N65WE FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

 7.3. Size:560K  fuji
 fgw50n60hd.pdf

FGW50N65WE FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 7.4. Size:569K  fuji
 fgw50n60hc.pdf

FGW50N65WE FGW50N65WE

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

Datasheet: TIG064E8 , TIG065E8 , TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , CRG40T60AN3H , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA .

 

 
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