FGW50N65WE datasheet, аналоги, основные параметры

Наименование: FGW50N65WE  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 330 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 70 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃

tr ⓘ - Время нарастания типовое: 36 nS

Coesⓘ - Выходная емкость, типовая: 105 pF

Тип корпуса: TO247

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 Аналог (замена) для FGW50N65WE

- подбор ⓘ IGBT транзистора по параметрам

 

FGW50N65WE даташит

 7.1. Size:565K  fuji
 fgw50n60h.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

 7.2. Size:625K  fuji
 fgw50n60vda.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circuit

 7.3. Size:560K  fuji
 fgw50n60hd.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

 7.4. Size:569K  fuji
 fgw50n60hc.pdf pdf_icon

FGW50N65WE

http //www.fujielectric.com/products/semiconductor/ FGW50N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TIG064E8, TIG065E8, TIG066SS, DGG4015, FGM622S, FGM623S, MGD623N, MGD623S, FGPF4536, SKW030N065, GM200HB12CT, GM400HB06CT, KGH15N120NDA, KGH25N120NDA, KGT12N120NDH, KGT15N120KDA, KGT15N120NDA