GM200HB12CT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GM200HB12CT
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 260 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 760000 pF
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de GM200HB12CT IGBT
GM200HB12CT Datasheet (PDF)
gm200hb12ct.pdf

SEMICONDUCTORGM200HB12CTTECHNICAL DATA1200V/200A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 0.2+_6.5 0.2+_ _28 0.2 28 0.2+ +Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimize
sgm200hf12a3tfd.pdf

SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3
nsgm200gb120b.pdf

SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
legm200bh120l2k.pdf

Sep.2020LEGM200BH120L2KIGBT Power ModuleFeatures: Applications: VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Condi
Otros transistores... TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , RJP30H1DPD , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA .



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