GM200HB12CT Todos los transistores

 ..1. Size:415K  kec
 gm200hb12ct.pdf

SEMICONDUCTOR GM200HB12CT TECHNICAL DATA 1200V/200A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 0.2 + _ 6.5 0.2 + _ _ 28 0.2 28 0.2 + + Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimize

 8.1. Size:408K  silan
 sgm200hf12a3tfd.pdf

 9.1. Size:1383K  nell
 nsgm200gb120b.pdf

SEMICONDUCTOR 5. Small temperature dependence of the turn-off switching loss 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR

 9.2. Size:1345K  cn leading energy
 legm200bh120l2k.pdf

Sep.2020 LEGM200BH120L2K IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Condi

 9.3. Size:1328K  cn leading energy
 legm200ba120l2h.pdf

Sep.2020 LEGM200BA120L2H IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Conditio