GM200HB12CT Todos los transistores

 

GM200HB12CT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GM200HB12CT
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 260 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 50
   Capacitancia de salida (Cc), typ, pF: 760000
   Paquete / Cubierta: MODULE

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GM200HB12CT Datasheet (PDF)

 ..1. Size:415K  kec
gm200hb12ct.pdf

GM200HB12CT
GM200HB12CT

SEMICONDUCTORGM200HB12CTTECHNICAL DATA1200V/200A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 0.2+_6.5 0.2+_ _28 0.2 28 0.2+ +Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimize

 8.1. Size:408K  silan
sgm200hf12a3tfd.pdf

GM200HB12CT
GM200HB12CT

SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3

 9.1. Size:1383K  nell
nsgm200gb120b.pdf

GM200HB12CT
GM200HB12CT

SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

 9.2. Size:1345K  cn leading energy
legm200bh120l2k.pdf

GM200HB12CT
GM200HB12CT

Sep.2020LEGM200BH120L2KIGBT Power ModuleFeatures: Applications: VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Condi

 9.3. Size:1328K  cn leading energy
legm200ba120l2h.pdf

GM200HB12CT
GM200HB12CT

Sep.2020LEGM200BA120L2HIGBT Power ModuleFeatures Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2 Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Conditio

Otros transistores... TIG066SS , DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , RJP30H1DPD , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA .

 

 
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