GM200HB12CT Todos los transistores

SEMICONDUCTOR GM200HB12CT TECHNICAL DATA 1200V/200A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 0.2 + _ 6.5 0.2 + _ _ 28 0.2 28 0.2 + + Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimize

SEMICONDUCTOR 5. Small temperature dependence of the turn-off switching loss 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR

Sep.2020 LEGM200BH120L2K IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Condi

Sep.2020 LEGM200BA120L2H IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Conditio