GM200HB12CT Datasheet. Specs and Replacement

Type Designator: GM200HB12CT  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 260 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 760000 pF

Package: MODULE

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GM200HB12CT datasheet

 ..1. Size:415K  kec
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GM200HB12CT

SEMICONDUCTOR GM200HB12CT TECHNICAL DATA 1200V/200A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 0.2 + _ 6.5 0.2 + _ _ 28 0.2 28 0.2 + + Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimize... See More ⇒

 8.1. Size:408K  silan
sgm200hf12a3tfd.pdf pdf_icon

GM200HB12CT

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 9.1. Size:1383K  nell
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GM200HB12CT

SEMICONDUCTOR 5. Small temperature dependence of the turn-off switching loss 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR ... See More ⇒

 9.2. Size:1345K  cn leading energy
legm200bh120l2k.pdf pdf_icon

GM200HB12CT

Sep.2020 LEGM200BH120L2K IGBT Power Module Features Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L2 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parameter Condi... See More ⇒

Specs: TIG066SS, DGG4015, FGM622S, FGM623S, MGD623N, MGD623S, FGW50N65WE, SKW030N065, RJP30H2A, GM400HB06CT, KGH15N120NDA, KGH25N120NDA, KGT12N120NDH, KGT15N120KDA, KGT15N120NDA, KGT15N120NDH, KGT15N60FDA

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