GM200HB12CT
IGBT. Datasheet pdf. Equivalent
Type Designator: GM200HB12CT
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 260
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 50
nS
Coesⓘ - Output Capacitance, typ: 760000
pF
Package: MODULE
GM200HB12CT
Transistor Equivalent Substitute - IGBT Cross-Reference Search
GM200HB12CT
Datasheet (PDF)
..1. Size:415K kec
gm200hb12ct.pdf 
SEMICONDUCTORGM200HB12CTTECHNICAL DATA1200V/200A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 0.2+_6.5 0.2+_ _28 0.2 28 0.2+ +Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimize
8.1. Size:408K silan
sgm200hf12a3tfd.pdf
SGM200HF12A3TFD 200A, 1200V IGBT 0B SGM200HF12A3TFD 1B 200A1200VVCE(sat)( ) =2.2V@IC=200A VCE(sat) DBC A3
9.1. Size:1383K nell
nsgm200gb120b.pdf
SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
9.2. Size:1345K cn leading energy
legm200bh120l2k.pdf
Sep.2020LEGM200BH120L2KIGBT Power ModuleFeatures: Applications: VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Condi
9.3. Size:1328K cn leading energy
legm200ba120l2h.pdf
Sep.2020LEGM200BA120L2HIGBT Power ModuleFeatures Applications VCE=1200V IC=200A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type PackagePackage Type & Internal Circuit L2 Internal CircuitMaximum Rated ValuesIGBT InverterSymbol Parameter Conditio
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