GM400HB06CT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR GM400HB06CT TECHNICAL DATA 600V/400A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 + 0.2 _ 6.5 0.2 + _ _ 28 + 0.2 28 + 0.2 Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimized f

LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsat VCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt

AGM4005LLM1 General Description Product Summary The AGM4005LLM1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 40V 0.92m 330A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to mi

AGM4005LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

AGM4008LL General Description Product Summary The AGM4008LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 0.63m 500A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to minim