All IGBT. GM400HB06CT Datasheet

 

GM400HB06CT Datasheet and Replacement


   Type Designator: GM400HB06CT
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 500 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 1540000 pF
   Package: MODULE
 

 GM400HB06CT substitution

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GM400HB06CT Datasheet (PDF)

 ..1. Size:415K  kec
 gm400hb06ct.pdf pdf_icon

GM400HB06CT

SEMICONDUCTORGM400HB06CTTECHNICAL DATA600V/400A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 + 0.2_6.5 0.2+_ _28 + 0.2 28 + 0.2Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimized f

 8.1. Size:534K  cn luxin semi
 lgm400hf65s4t1a.pdf pdf_icon

GM400HB06CT

LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsatVCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt

Datasheet: DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , FGA25N120ANTD , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA .

History: RCP1565SL1 | APT100GF60JRD

Keywords - GM400HB06CT transistor datasheet

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