GM400HB06CT PDF and Equivalents Search

 

GM400HB06CT Specs and Replacement

Type Designator: GM400HB06CT

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 500 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 1540000 pF

Package: MODULE

 GM400HB06CT Substitution

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GM400HB06CT datasheet

 ..1. Size:415K  kec
gm400hb06ct.pdf pdf_icon

GM400HB06CT

SEMICONDUCTOR GM400HB06CT TECHNICAL DATA 600V/400A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 + 0.2 _ 6.5 0.2 + _ _ 28 + 0.2 28 + 0.2 Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimized f... See More ⇒

 8.1. Size:534K  cn luxin semi
lgm400hf65s4t1a.pdf pdf_icon

GM400HB06CT

LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsat VCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt... See More ⇒

 9.1. Size:1872K  cn agmsemi
agm4005llm1.pdf pdf_icon

GM400HB06CT

AGM4005LLM1 General Description Product Summary The AGM4005LLM1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 40V 0.92m 330A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to mi... See More ⇒

 9.2. Size:1058K  cn agmsemi
agm4005ll.pdf pdf_icon

GM400HB06CT

AGM4005LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I... See More ⇒

Specs: DGG4015 , FGM622S , FGM623S , MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , RJP30E2DPP-M0 , KGH15N120NDA , KGH25N120NDA , KGT12N120NDH , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA .

History: SGL30N60RUFD

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