GM400HB06CT PDF and Equivalents Search

SEMICONDUCTOR GM400HB06CT TECHNICAL DATA 600V/400A 2 IN ONE PACKAGE TENTATIVE FEATURES IGBT New Technology Unit mm OUTLINE DRAWING Low VCE(sat) Low Turn-off losses _ 108.5 + 0.2 _ 6.5 0.2 + _ _ 28 + 0.2 28 + 0.2 Short tail current Positive temperature coefficient G2 E2 APPLICATION E1 AC & DC Motor controls G1 M6 General purpose inverters Optimized f... See More ⇒

LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsat VCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt... See More ⇒

AGM4005LLM1 General Description Product Summary The AGM4005LLM1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 40V 0.92m 330A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to mi... See More ⇒

AGM4005LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I... See More ⇒

AGM4008LL General Description Product Summary The AGM4008LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 0.63m 500A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to minim... See More ⇒