GM400HB06CT - Даташиты. Аналоги. Основные параметры

SEMICONDUCTORGM400HB06CTTECHNICAL DATA600V/400A 2 IN ONE PACKAGETENTATIVEFEATURES IGBT New Technology Unit : mmOUTLINE DRAWINGLow VCE(sat)Low Turn-off losses _108.5 + 0.2_6.5 0.2+_ _28 + 0.2 28 + 0.2Short tail currentPositive temperature coefficientG2E2APPLICATION E1AC & DC Motor controlsG1M6General purpose invertersOptimized f

LGM400HF65S4T1A 650V/400A 2 in one-package FEATURES Preliminary Data V with positive temperature coefficient CEsatVCES = 650V IC nom = 400A / ICRM = 800A Low Vcesat Low switching losses Low inductance case Isolated copper baseplate using DBC technology APPLICATION Welding Machine UPS Motor Drives Equivalent Circuit Schematic htt

AGM4005LLM1 General DescriptionProduct SummaryThe AGM4005LLM1 combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.40V 0.92m 330A FeaturesAdvance high cell density Trench technologyTOLL Pin Configuration Low R to mi

AGM4005LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 45 -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM4008LL General DescriptionProduct SummaryThe AGM4008LL combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.40V 0.63m 500A FeaturesAdvance high cell density Trench technologyTOLL Pin Configuration Low R to minim