KGT25N135NDH
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGT25N135NDH
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 220
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.85
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 7.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 25
nS
Coesⓘ - Capacitancia de salida, typ: 100
pF
Qgⓘ - Carga total de la puerta, typ: 150
nC
Paquete / Cubierta:
TO3PN
Búsqueda de reemplazo de KGT25N135NDH
- IGBT
KGT25N135NDH
Datasheet (PDF)
..1. Size:1605K kec
kgt25n135ndh.pdf 
SEMICONDUCTORKGT25N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
5.1. Size:1558K kec
kgt25n135kdh.pdf
SEMICONDUCTORKGT25N135KDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c
7.1. Size:565K kec
kgt25n120kda.pdf
SEMICONDUCTORKGT25N120KDA TECHNICAL DATAGeneral DescriptionBAKEC NPT Trench IGBTs offer low switching losses, high energyOS Kefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters. DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_C20.85 + 0.30FEATURES _D 3.00 + 0.2
7.2. Size:122K kec
kgt25n120nda.pdf
SEMICONDUCTORKGT25N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed
7.3. Size:1478K kec
kgt25n120ndh.pdf
SEMICONDUCTORKGT25N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
Otros transistores... KGT15N120KDA
, KGT15N120NDA
, KGT15N120NDH
, KGT15N60FDA
, KGT20N60KDA
, KGT25N120KDA
, KGT25N120NDA
, KGT25N120NDH
, FGA60N65SMD
, KGT30N120NDA
, KGT30N120NDH
, KGT30N60KDA
, KGT40N60KDA
, KGT50N60KDA
, RJH30E2DPP
, IRG4PC60UPBF
, APT100GF60B2R
.
