KGT25N135NDH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KGT25N135NDH  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 220 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Encapsulados: TO3PN

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KGT25N135NDH datasheet

 ..1. Size:1605K  kec
 kgt25n135ndh.pdf pdf_icon

KGT25N135NDH

SEMICONDUCTOR KGT25N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

 5.1. Size:1558K  kec
 kgt25n135kdh.pdf pdf_icon

KGT25N135NDH

SEMICONDUCTOR KGT25N135KDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

 7.1. Size:565K  kec
 kgt25n120kda.pdf pdf_icon

KGT25N135NDH

SEMICONDUCTOR KGT25N120KDA TECHNICAL DATA General Description B A KEC NPT Trench IGBTs offer low switching losses, high energy O S K efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 FEATURES _ D 3.00 + 0.2

 7.2. Size:122K  kec
 kgt25n120nda.pdf pdf_icon

KGT25N135NDH

SEMICONDUCTOR KGT25N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed

MOSTRAR MÁS

Otros transistores... KGT15N120KDA, KGT15N120NDA, KGT15N120NDH, KGT15N60FDA, KGT20N60KDA, KGT25N120KDA, KGT25N120NDA, KGT25N120NDH, SGT60N60FD1P7, KGT30N120NDA, KGT30N120NDH, KGT30N60KDA, KGT40N60KDA, KGT50N60KDA, RJH30E2DPP, IRG4PC60UPBF, APT100GF60B2R