KGT25N135NDH IGBT. Datasheet pdf. Equivalent
Type Designator: KGT25N135NDH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 220 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Qgⓘ - Total Gate Charge, typ: 150 nC
Package: TO3PN
KGT25N135NDH Transistor Equivalent Substitute - IGBT Cross-Reference Search
KGT25N135NDH Datasheet (PDF)
kgt25n135ndh.pdf
SEMICONDUCTORKGT25N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
kgt25n135kdh.pdf
SEMICONDUCTORKGT25N135KDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c
kgt25n120kda.pdf
SEMICONDUCTORKGT25N120KDA TECHNICAL DATAGeneral DescriptionBAKEC NPT Trench IGBTs offer low switching losses, high energyOS Kefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters. DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_C20.85 + 0.30FEATURES _D 3.00 + 0.2
kgt25n120nda.pdf
SEMICONDUCTORKGT25N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed
kgt25n120ndh.pdf
SEMICONDUCTORKGT25N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
Datasheet: KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , FGA60N65SMD , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R .
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