Справочник IGBT. KGT25N135NDH

 

KGT25N135NDH - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: KGT25N135NDH
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 220
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1350
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 50
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.85
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 7.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 25
   Емкость коллектора типовая (Cc), pf: 100
   Общий заряд затвора (Qg), typ, nC: 150
   Тип корпуса: TO3PN

 Аналог (замена) для KGT25N135NDH

 

 

KGT25N135NDH Datasheet (PDF)

 ..1. Size:1605K  kec
 kgt25n135ndh.pdf

KGT25N135NDH KGT25N135NDH

SEMICONDUCTORKGT25N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

 5.1. Size:1558K  kec
 kgt25n135kdh.pdf

KGT25N135NDH KGT25N135NDH

SEMICONDUCTORKGT25N135KDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c

 7.1. Size:565K  kec
 kgt25n120kda.pdf

KGT25N135NDH KGT25N135NDH

SEMICONDUCTORKGT25N120KDA TECHNICAL DATAGeneral DescriptionBAKEC NPT Trench IGBTs offer low switching losses, high energyOS Kefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters. DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_C20.85 + 0.30FEATURES _D 3.00 + 0.2

 7.2. Size:122K  kec
 kgt25n120nda.pdf

KGT25N135NDH KGT25N135NDH

SEMICONDUCTORKGT25N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed

 7.3. Size:1478K  kec
 kgt25n120ndh.pdf

KGT25N135NDH KGT25N135NDH

SEMICONDUCTORKGT25N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

Другие IGBT... KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , RJH30E2DPP , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R .

 

 
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