RJH30E2DPP Todos los transistores

 

RJH30E2DPP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH30E2DPP

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25

Tensión colector-emisor (Vce): 360

Voltaje de saturación colector-emisor (Vce sat): 1.7

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 35

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 100

Capacitancia de salida (Cc), pF: 60

Empaquetado / Estuche: TO-220FL

Búsqueda de reemplazo de RJH30E2DPP - IGBT

 

RJH30E2DPP Datasheet (PDF)

7.1. rjp30e2dpp-equivalent for rjh30e2 without diode.pdf Size:152K _renesas

RJH30E2DPP
RJH30E2DPP

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

9.1. r07ds0463ej rjh30h1dpp.pdf Size:152K _renesas

RJH30E2DPP
RJH30E2DPP

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F

9.2. rjh30h1dpp-m0.pdf Size:131K _renesas

RJH30E2DPP
RJH30E2DPP

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F

 9.3. r07ds0464ej rjh30h2dpk.pdf Size:152K _renesas

RJH30E2DPP
RJH30E2DPP

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa

9.4. rjh30h2dpk-m0.pdf Size:130K _renesas

RJH30E2DPP
RJH30E2DPP

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa

Otros transistores... KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , KGT50N60KDA , TGAN60N60FD , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 , APT100GT120JU2 , APT100GT120JU3 .

 

 
Back to Top

 


RJH30E2DPP
  RJH30E2DPP
  RJH30E2DPP
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C

 

 

 
Back to Top

 

Order TRANSISTORS