RJH30E2DPP PDF and Equivalents Search

 7.1. Size:152K  renesas
 rjp30e2dpp rjh30e2 equivalent no diode.pdf

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack... See More ⇒

 9.1. Size:20K  1
 rjh3044.pdf

RJH3044 absolute maximum ratings (1) Collector to emitter voltage VCES 360 V (2) Gate to emitter voltage VGES 30 V (3) Collector current IC 30 A (4) Collector peak current ic(peak) 200 A (5) Collector to emitter diode Forward peak current iDF(peak) 100 A (6) Collector dissipation PC 20 W (7) Junction to case thermal impedance qj-c 6.25 'CW (8) Junction temperature Tj ... See More ⇒

 9.2. Size:152K  renesas
 r07ds0464ej rjh30h2dpk.pdf

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tr = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Built-in Fa... See More ⇒

 9.3. Size:152K  renesas
 r07ds0463ej rjh30h1dpp.pdf

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Built-in F... See More ⇒

 9.4. Size:130K  renesas
 rjh30h2dpk-m0.pdf

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tr = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Built-in Fa... See More ⇒

 9.5. Size:131K  renesas
 rjh30h1dpp-m0.pdf

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Built-in F... See More ⇒