Справочник IGBT. RJH30E2DPP

 

RJH30E2DPP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH30E2DPP
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 25
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 360
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 35
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 100
   Емкость коллектора типовая (Cc), pf: 60
   Общий заряд затвора (Qg), typ, nC: 34
   Тип корпуса: TO220F

 Аналог (замена) для RJH30E2DPP

 

 

RJH30E2DPP Datasheet (PDF)

 7.1. Size:152K  renesas
 rjp30e2dpp rjh30e2 equivalent no diode.pdf

RJH30E2DPP RJH30E2DPP

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200Silicon N Channel IGBT Rev.2.00High Speed Power Switching Apr 12, 2011Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL Outline RENESAS Pack

 9.1. Size:20K  1
 rjh3044.pdf

RJH30E2DPP

RJH3044 absolute maximum ratings: (1) Collector to emitter voltage VCES: 360 V (2) Gate to emitter voltage VGES: 30 V (3) Collector current IC: 30 A (4) Collector peak current ic(peak): 200 A (5) Collector to emitter diode Forward peak current iDF(peak): 100 A (6) Collector dissipation PC: 20 W (7) Junction to case thermal impedance qj-c: 6.25 'CW (8) Junction temperature Tj:

 9.2. Size:152K  renesas
 r07ds0464ej rjh30h2dpk.pdf

RJH30E2DPP RJH30E2DPP

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa

 9.3. Size:152K  renesas
 r07ds0463ej rjh30h1dpp.pdf

RJH30E2DPP RJH30E2DPP

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F

 9.4. Size:130K  renesas
 rjh30h2dpk-m0.pdf

RJH30E2DPP RJH30E2DPP

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa

 9.5. Size:131K  renesas
 rjh30h1dpp-m0.pdf

RJH30E2DPP RJH30E2DPP

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F

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