APT13GP120BSC Todos los transistores

 

APT13GP120BSC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT13GP120BSC
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 250
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 41
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 3.3
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 12
   Capacitancia de salida (Cc), typ, pF: 90
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de APT13GP120BSC - IGBT

 

APT13GP120BSC Datasheet (PDF)

 ..1. Size:190K  apt
apt13gp120bsc.pdf

APT13GP120BSC APT13GP120BSC

APT13GP120BSC1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost al

 3.1. Size:424K  apt
apt13gp120bdq1g.pdf

APT13GP120BSC APT13GP120BSC

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

 3.2. Size:190K  apt
apt13gp120bdf1.pdf

APT13GP120BSC APT13GP120BSC

APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide

 3.3. Size:152K  apt
apt13gp120b.pdf

APT13GP120BSC APT13GP120BSC

APT13GP120BTYPICAL PERFORMANCE CURVESAPT13GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWE

 3.4. Size:409K  apt
apt13gp120bg.pdf

APT13GP120BSC APT13GP120BSC

TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BPOWER MOS 7 IGBTD3PAKSCThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch G EThrough Technology this IGBT is ideal for many high frequency, high voltage switching Gapplication

Otros transistores... APT11GF120BRD1 , APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , MBQ40T65FDSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 .

 

 
Back to Top

 


APT13GP120BSC
  APT13GP120BSC
  APT13GP120BSC
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top