APT13GP120BSC Даташит. Аналоги. Параметры и характеристики.
Наименование: APT13GP120BSC
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 41 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 90 pF
Qgⓘ - Общий заряд затвора, typ: 55 nC
Тип корпуса: TO247
APT13GP120BSC Datasheet (PDF)
apt13gp120bsc.pdf

APT13GP120BSC1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost al
apt13gp120bdq1g.pdf

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
apt13gp120bdf1.pdf

APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide
apt13gp120b.pdf

APT13GP120BTYPICAL PERFORMANCE CURVESAPT13GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWE
Другие IGBT... APT11GF120BRD1 , APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , TGAN20N135FD , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 .
History: MM20G3R135B | SME6G15US60
History: MM20G3R135B | SME6G15US60



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