All IGBT. APT13GP120BSC Equivalents Search

 

APT13GP120BSC Spec and Replacement


   Type Designator: APT13GP120BSC
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO247

 APT13GP120BSC Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT13GP120BSC specs

 ..1. Size:190K  apt
apt13gp120bsc.pdf pdf_icon

APT13GP120BSC

APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost al... See More ⇒

 3.1. Size:424K  apt
apt13gp120bdq1g.pdf pdf_icon

APT13GP120BSC

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency... See More ⇒

 3.2. Size:190K  apt
apt13gp120bdf1.pdf pdf_icon

APT13GP120BSC

APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provide... See More ⇒

 3.3. Size:152K  apt
apt13gp120b.pdf pdf_icon

APT13GP120BSC

APT13GP120B TYPICAL PERFORMANCE CURVES APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWE... See More ⇒

Specs: APT11GF120BRD1 , APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , IKW50N60H3 , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 .

Keywords - APT13GP120BSC transistor spec

 APT13GP120BSC cross reference
 APT13GP120BSC equivalent finder
 APT13GP120BSC lookup
 APT13GP120BSC substitution
 APT13GP120BSC replacement

 

 
Back to Top

 


 
.