All IGBT. APT13GP120BSC Datasheet

 

APT13GP120BSC Datasheet and Replacement


   Type Designator: APT13GP120BSC
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT13GP120BSC Datasheet (PDF)

 ..1. Size:190K  apt
apt13gp120bsc.pdf pdf_icon

APT13GP120BSC

APT13GP120BSC1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost al

 3.1. Size:424K  apt
apt13gp120bdq1g.pdf pdf_icon

APT13GP120BSC

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

 3.2. Size:190K  apt
apt13gp120bdf1.pdf pdf_icon

APT13GP120BSC

APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide

 3.3. Size:152K  apt
apt13gp120b.pdf pdf_icon

APT13GP120BSC

APT13GP120BTYPICAL PERFORMANCE CURVESAPT13GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWE

Datasheet: APT11GF120BRD1 , APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , TGAN20N135FD , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 .

History: APT44GA60B | SNG401225 | KGT25N120NDH | BT30N60ANF | RJH60F3DPK | STGB30NB60H | IRGP50B60PD

Keywords - APT13GP120BSC transistor datasheet

 APT13GP120BSC cross reference
 APT13GP120BSC equivalent finder
 APT13GP120BSC lookup
 APT13GP120BSC substitution
 APT13GP120BSC replacement

 

 
Back to Top

 


 
.