APT13GP120K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT13GP120K
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 90 pF
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
APT13GP120K Datasheet (PDF)
apt13gp120k.pdf

APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte
apt13gp120kg.pdf

APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte
apt13gp120bdq1g.pdf

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
apt13gp120bdf1.pdf

APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide
Otros transistores... APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , CRG60T60AK3HD , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 .
History: FGH80N60FD | TGH30N120FD | FGA6065ADF | GPU150HF120D2 | IRG4PH30K | HGTG30N60C3D | IXBH9N160
History: FGH80N60FD | TGH30N120FD | FGA6065ADF | GPU150HF120D2 | IRG4PH30K | HGTG30N60C3D | IXBH9N160



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