APT13GP120K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT13GP120K
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 90 pF
Qgⓘ - Carga total de la puerta, typ: 55 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de APT13GP120K - IGBT
APT13GP120K Datasheet (PDF)
apt13gp120k.pdf
APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte
apt13gp120kg.pdf
APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte
apt13gp120bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
apt13gp120bdf1.pdf
APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide
apt13gp120b.pdf
APT13GP120BTYPICAL PERFORMANCE CURVESAPT13GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWE
apt13gp120bg.pdf
TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BPOWER MOS 7 IGBTD3PAKSCThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch G EThrough Technology this IGBT is ideal for many high frequency, high voltage switching Gapplication
apt13gp120bsc.pdf
APT13GP120BSC1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost al
Otros transistores... APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , JT075N065WED , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 .
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