Справочник IGBT. APT13GP120K

 

APT13GP120K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT13GP120K
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 250
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 41
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 3.3
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 12
   Емкость коллектора типовая (Cc), pf: 90
   Общий заряд затвора (Qg), typ, nC: 55
   Тип корпуса: TO220

 Аналог (замена) для APT13GP120K

 

 

APT13GP120K Datasheet (PDF)

 ..1. Size:151K  apt
 apt13gp120k.pdf

APT13GP120K APT13GP120K

APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte

 0.1. Size:165K  apt
 apt13gp120kg.pdf

APT13GP120K APT13GP120K

APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte

 4.1. Size:424K  apt
 apt13gp120bdq1g.pdf

APT13GP120K APT13GP120K

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

 4.2. Size:190K  apt
 apt13gp120bdf1.pdf

APT13GP120K APT13GP120K

APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide

 4.3. Size:152K  apt
 apt13gp120b.pdf

APT13GP120K APT13GP120K

APT13GP120BTYPICAL PERFORMANCE CURVESAPT13GP120B1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWE

 4.4. Size:409K  apt
 apt13gp120bg.pdf

APT13GP120K APT13GP120K

TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BPOWER MOS 7 IGBTD3PAKSCThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch G EThrough Technology this IGBT is ideal for many high frequency, high voltage switching Gapplication

 4.5. Size:190K  apt
 apt13gp120bsc.pdf

APT13GP120K APT13GP120K

APT13GP120BSC1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost al

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