All IGBT. APT13GP120K Datasheet

 

APT13GP120K IGBT. Datasheet pdf. Equivalent


   Type Designator: APT13GP120K
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 41 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO220
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APT13GP120K Datasheet (PDF)

 ..1. Size:151K  apt
apt13gp120k.pdf pdf_icon

APT13GP120K
APT13GP120K

APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte

 0.1. Size:165K  apt
apt13gp120kg.pdf pdf_icon

APT13GP120K
APT13GP120K

APT13GP120K1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-220technology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alte

 4.1. Size:424K  apt
apt13gp120bdq1g.pdf pdf_icon

APT13GP120K
APT13GP120K

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

 4.2. Size:190K  apt
apt13gp120bdf1.pdf pdf_icon

APT13GP120K
APT13GP120K

APT13GP120BDF1APT13GP120BDF11200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provide

Datasheet: APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , CRG60T60AK3HD , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 .

 

 
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