APT13GP120K Datasheet. Specs and Replacement

Type Designator: APT13GP120K  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 41 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 90 pF

Qg ⓘ - Total Gate Charge, typ: 55 nC

Package: TO220

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APT13GP120K datasheet

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 apt13gp120k.pdf pdf_icon

APT13GP120K

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte... See More ⇒

 0.1. Size:165K  apt
 apt13gp120kg.pdf pdf_icon

APT13GP120K

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte... See More ⇒

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APT13GP120K

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency... See More ⇒

 4.2. Size:190K  apt
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APT13GP120K

APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provide... See More ⇒

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Specs: APT11GF120KR, APT11GP60BDQB, APT11GP60K, APT12GT60BR, APT12GT60KR, APT13GP120B, APT13GP120BDF1, APT13GP120BSC, YGW50N65F1A, APT15GP60B, APT15GP60BDF1, APT15GP60BDQ1, APT15GP60BSC, APT15GP60K, GT60N321, GT30F124, GT30F125

Keywords - APT13GP120K transistor spec

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