All IGBT. APT13GP120K Datasheet

 

APT13GP120K IGBT. Datasheet pdf. Equivalent

Type Designator: APT13GP120K

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 3.3

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 41

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 12

Maximum Collector Capacity (Cc), pF: 90

Package: TO220

APT13GP120K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT13GP120K Datasheet (PDF)

1.1. apt13gp120b.pdf Size:152K _apt

APT13GP120K
APT13GP120K

APT13GP120B TYPICAL PERFORMANCE CURVES APT13GP120B 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWE

1.2. apt13gp120bdf1.pdf Size:190K _apt

APT13GP120K
APT13GP120K

APT13GP120BDF1 APT13GP120BDF1 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provide

1.3. apt13gp120bsc.pdf Size:190K _apt

APT13GP120K
APT13GP120K

APT13GP120BSC 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost al

1.4. apt13gp120k.pdf Size:151K _apt

APT13GP120K
APT13GP120K

APT13GP120K 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alte

1.5. apt13gp120bg.pdf Size:409K _igbt_a

APT13GP120K
APT13GP120K

TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® B POWER MOS 7 IGBT D3PAK S C The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch G E Through Technology this IGBT is ideal for many high frequency, high voltage switching G application

1.6. apt13gp120bdq1g.pdf Size:424K _igbt_a

APT13GP120K
APT13GP120K

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

1.7. apt13gp120kg.pdf Size:165K _igbt_a

APT13GP120K
APT13GP120K

APT13GP120K 1200V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alte

Datasheet: APT11GF120KR , APT11GP60BDQB , APT11GP60K , APT12GT60BR , APT12GT60KR , APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , SGP10N60A , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , APT15GP60K , GT60N321 , GT30F124 , GT30F125 .

 


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