APT15GP60K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT15GP60K  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 210 pF

Encapsulados: TO220

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APT15GP60K datasheet

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APT15GP60K

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APT15GP60K

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APT15GP60K

TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz oper

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 apt15gp60bdq1g.pdf pdf_icon

APT15GP60K

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope

MOSTRAR MÁS

Otros transistores... APT13GP120B, APT13GP120BDF1, APT13GP120BSC, APT13GP120K, APT15GP60B, APT15GP60BDF1, APT15GP60BDQ1, APT15GP60BSC, CRG15T120BNR3S, GT60N321, GT30F124, GT30F125, GT45F127, GT45F128, GT30F131, GT30G124, GT30G125