APT15GP60K Даташит. Аналоги. Параметры и характеристики.
Наименование: APT15GP60K
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 56 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 210 pF
Qgⓘ - Общий заряд затвора, typ: 55 nC
Тип корпуса: TO220
- подбор IGBT транзистора по параметрам
APT15GP60K Datasheet (PDF)
apt15gp60k.pdf

APT15GP60K600V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.G Low Conduction Loss 100 kHz operation @ 400V, 19ACCE Low Gate Charge
apt15gp60kg.pdf

APT15GP60K600V POWER MOS 7 IGBTTO-220The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.G Low Conduction Loss 100 kHz operation @ 400V, 19ACCE Low Gate Charge
apt15gp60bsc.pdf

TYPICAL PERFORMANCE CURVESAPT15GP60BSCAPT15GP60BSC600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz oper
apt15gp60bdq1g.pdf

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz ope
Другие IGBT... APT13GP120B , APT13GP120BDF1 , APT13GP120BSC , APT13GP120K , APT15GP60B , APT15GP60BDF1 , APT15GP60BDQ1 , APT15GP60BSC , TGD30N40P , GT60N321 , GT30F124 , GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 .
History: IRG7PH42U | IRG4RC10UD | WGW15G120N | APT20GN60BG | RJH60D3DPP-M0
History: IRG7PH42U | IRG4RC10UD | WGW15G120N | APT20GN60BG | RJH60D3DPP-M0



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