APT15GP60K PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

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TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz oper... See More ⇒

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TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope... See More ⇒

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APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge... See More ⇒

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TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz ope... See More ⇒

5.6. Size:265K microsemi
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APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20... See More ⇒

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APT15GP60BDL(G) 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Features Typical Applicat... See More ⇒

5.8. Size:265K microsemi
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APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 20... See More ⇒