GT30J124 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GT30J124

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 26

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.4

Corriente del colector DC máxima (Ic): 200(pulse)

Empaquetado / Estuche: TO220SIS

Búsqueda de reemplazo de GT30J124 - IGBT

GT30J124 Datasheet (PDF)

7.1. gt30j121.pdf Size:182K _toshiba

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ

7.2. gt30j126.pdf Size:187K _toshiba

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =

 7.3. gt30j122.pdf Size:321K _toshiba

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl

Otros transistores... GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , TGAN40N60FD , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 .