Справочник IGBT. GT30J124

 

GT30J124 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: GT30J124
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 26
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 200(pulse)
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.4
   Тип корпуса: TO220SIS

 Аналог (замена) для GT30J124

 

 

GT30J124 Datasheet (PDF)

 7.1. Size:321K  toshiba
 gt30j122.pdf

GT30J124 GT30J124

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl

 7.2. Size:182K  toshiba
 gt30j121.pdf

GT30J124 GT30J124

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ

 7.3. Size:192K  toshiba
 gt30j122a.pdf

GT30J124 GT30J124

GT30J122ADiscrete IGBTs Silicon N-Channel IGBTGT30J122AGT30J122AGT30J122AGT30J122A1. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. F

 7.4. Size:187K  toshiba
 gt30j126.pdf

GT30J124 GT30J124

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =

Другие IGBT... GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , IXGH60N60C2 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 .

 

 
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